Semiconductor Devices from Physics to Chip Design
Basic Principles and Advanced Fundamentals of Modern VLSI Devices, Fabrication, and PackagingBy Soo-Yeon Baek
Length13h 8m
About this audiobook
Every transistor specification is the consequence of a band diagram. This book makes that chain explicit, from crystal physics to the packaged chip.
You will build carrier statistics and transport from band structure, derive junction behavior and breakdown, and follow minority carriers through a bipolar transistor before constructing the metal-oxide-semiconductor capacitor that underlies everything modern. Transistor chapters carry you from long-channel current equations to subthreshold slope, drain-induced barrier lowering and the leakage that ended simple scaling, then into high-permittivity gate stacks, strain, fin and nanosheet devices. Memory, power and optoelectronic chapters widen the scope. Fabrication chapters connect the physics to lithography, etch, implantation and deposition, and closing chapters cover interconnect delay, advanced packaging, compact models, yield and reliability.
Written for electrical engineering students, device and process engineers, and semiconductor professionals, this book bridges the gap between abstract physics and practical chip design. Each chapter builds on the previous one, ensuring a coherent progression from fundamental principles to advanced topics. Whether you are new to the field or seeking to deepen your expertise, this text provides the rigorous foundation needed to understand and innovate in modern semiconductor technology.
What you will learn:
• How energy bands and carrier statistics govern semiconductor behavior
• The mechanisms of doping, drift, diffusion, and carrier transport
• Generation, recombination, and the role of excess carriers
• PN junction operation, including depletion, bias, and breakdown
• Metal-semiconductor contacts and heterojunctions
• Bipolar junction transistor physics and minority carrier action
• MOS capacitor behavior and threshold voltage determination
• MOSFET current-voltage characteristics and short-channel effects
• Modern device structures: high-permittivity gates, FinFET, and nanosheet
• Fabrication processes: lithography, etch, implant, and deposition
• Interconnect, packaging, compact models, yield, and reliability
This book is ideal for electrical engineering students at the advanced undergraduate or graduate level, device and process engineers in the semiconductor industry, and professionals seeking a comprehensive reference on semiconductor device fundamentals. It assumes a basic background in physics and calculus, but builds all necessary concepts from the ground up.
Audiobook details
GenreTechnology
Length13 hrs 8 mins
Narrated byListen with 1,000+ voices
FormateBook with Audio
Publish dateSep 27, 2026
LanguageEnglish
Table of contents
1Semiconductor Devices from Physics to Chip Design
2Foreword
3Preface
4About This Book
5Chapter 1: Crystals, Energy Bands and Carrier Statistics
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61.1 Crystal Structure, Lattices and Miller Indices
71.2 Reciprocal Space, Brillouin Zones and Diffraction
81.3 Energy Bands from Periodic Potentials
91.4 Density of States and Carrier Concentration
101.5 Fermi-Dirac Statistics Across Temperature
11Chapter 2: Doping, Drift, Diffusion and Carrier Transport
122.1 Donors, Acceptors and Ionization
132.2 Drift, Mobility and Scattering Mechanisms
142.3 Diffusion, the Einstein Relation and the Continuity Equations
152.4 High-Field Transport and Velocity Saturation
16Chapter 3: Generation, Recombination and Excess Carriers
173.1 Generation and Recombination Mechanisms
183.2 Minority-Carrier Lifetime and Diffusion Length
193.3 The Continuity Equations with Generation and Recombination
203.4 Quasi-Fermi Levels and Injection Level
21Chapter 4: The PN Junction: Depletion, Bias and Breakdown
224.1 Built-in Potential and the Depletion Approximation
234.2 The Ideal Diode Equation
244.3 Junction Capacitance and Small-Signal Behavior
254.4 Avalanche and Tunneling Breakdown
26Chapter 5: Metal-Semiconductor Contacts and Heterojunctions
275.1 Schottky Barrier Formation and Band Alignment
285.2 Thermionic Emission and Ohmic Contacts
295.3 Heterojunctions and Band Offset Rules
30Chapter 6: Bipolar Junction Transistors
316.1 Structure, Modes and Minority-Carrier Injection
326.2 Current Gain and the Ebers-Moll Model
336.3 Base-Width Modulation and High-Injection Effects
346.4 Frequency Response and Switching
35Chapter 7: The MOS Capacitor and Threshold Voltage
367.1 Accumulation, Depletion and Inversion
377.2 Oxide and Interface Charge
387.3 Capacitance-Voltage Characteristics
397.4 Threshold Voltage and the Body Effect
40Chapter 8: MOSFET Operation and Current-Voltage Behaviour
418.1 Gradual Channel Approximation and the Linear Region
428.2 Saturation Region and Transconductance
438.3 Subthreshold Conduction and Slope
448.4 Mobility Degradation and Real Device Effects
45Chapter 9: Scaling, Short-Channel Effects and Leakage
469.1 Constant-Field Scaling and Its Limits
479.2 Drain-Induced Barrier Lowering and Punch-Through
489.3 Gate and Junction Leakage
499.4 Leakage Components and Power Budget
50Chapter 10: Modern Devices: High-Permittivity Gates, FinFET and Nanosheet
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